|
EU RoHS |
Not Compliant
|
|
ECCN (US) |
EAR99 |
|
Part Status |
Active |
|
HTS |
8541.29.00.95 |
|
SVHC |
Yes |
|
SVHC Exceeds Threshold |
Yes |
|
Product Category |
Power MOSFET |
|
Configuration |
Single |
|
Process Technology |
HEXFET |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Number of Elements per Chip |
1 |
|
Maximum Drain Source Voltage (V) |
100 |
|
Maximum Gate Source Voltage (V) |
±20 |
|
Maximum Gate Threshold Voltage (V) |
4 |
|
Operating Junction Temperature (°C) |
-55 to 150 |
|
Maximum Continuous Drain Current (A) |
6.5 |
|
Maximum Gate Source Leakage Current (nA) |
100 |
|
Maximum IDSS (uA) |
25 |
|
Maximum Drain Source Resistance (MOhm) |
320@10V |
|
Typical Gate Charge @ Vgs (nC) |
34.8(Max)@10V |
|
Typical Gate Charge @ 10V (nC) |
34.8(Max) |
|
Typical Gate to Drain Charge (nC) |
23.1(Max) |
|
Typical Gate to Source Charge (nC) |
6.8(Max) |
|
Typical Input Capacitance @ Vds (pF) |
800@25V |
|
Typical Reverse Transfer Capacitance @ Vds (pF) |
125@25V |
|
Minimum Gate Threshold Voltage (V) |
2 |
|
Typical Output Capacitance (pF) |
350 |
|
Maximum Power Dissipation (mW) |
25000 |
|
Typical Fall Time (ns) |
140(Max) |
|
Typical Rise Time (ns) |
140(Max) |
|
Typical Turn-Off Delay Time (ns) |
140(Max) |
|
Typical Turn-On Delay Time (ns) |
60(Max) |
|
Minimum Operating Temperature (°C) |
-55 |
|
Maximum Operating Temperature (°C) |
150 |
|
Supplier Temperature Grade |
Military |
|
Maximum Positive Gate Source Voltage (V) |
20 |
