| EU RoHS |
Compliant |
| ECCN (US) |
EAR99 |
| Part Status |
Active |
| HTS |
8541.10.00.80 |
| Product Category |
Power MOSFET |
| Configuration |
Single |
| Process Technology |
HEXFET |
| Channel Mode |
Enhancement |
| Channel Type |
P |
| Number of Elements per Chip |
1 |
| Maximum Drain Source Voltage (V) |
100 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Continuous Drain Current (A) |
19 |
| Maximum Drain Source Resistance (mOhm) |
200@10V |
| Typical Gate Charge @ Vgs (nC) |
61(Max)@10V |
| Typical Gate Charge @ 10V (nC) |
61(Max) |
| Typical Input Capacitance @ Vds (pF) |
1400@25V |
| Maximum Power Dissipation (mW) |
150000 |
| Typical Fall Time (ns) |
57 |
| Typical Rise Time (ns) |
73 |
| Typical Turn-Off Delay Time (ns) |
34 |
| Typical Turn-On Delay Time (ns) |
16 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
| Supplier Package |
TO-220AB |
| Pin Count |
3 |
| Standard Package Name |
TO-220 |
| Mounting |
Through Hole |
| Package Height |
9.01(Max) |
| Package Length |
10.41(Max) |
| Package Width |
4.7(Max) |
| PCB changed |
3 |
| Tab |
Tab |
| Lead Shape |
Through Hole |
